DS EN 15991:2011 Testing Of Ceramic And Basic Materials - Direct Determination Of Mass Fractions Of Impurities In Powders And Granules Of Silicon Carbide By Inductively Coupled Plasma Optical Emission Spectrometry (Icp Oes) With Electrothermal Vaporisation (Etv) Describes a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide.